v rrm = 800 v - 1200 v i f = 70 a features ? high surge capability do-5 package ? not esd sensitive note: 1. standard polarity: stud is cathode. 3. stud is base. parameter symbol unit repetitive peak reverse voltage v rrm v rms reverse voltage v rms v dc blocking voltage v dc v silicon standard recover y diode maximum ratings, at t j = 25 c, unless otherwise specified ("r" devices have leads reversed) 800 1200 840 1200 1000 800 conditions s70k (r) S70M (r) s70q (r) 1000 700 560 ? types from 800 v to 1200 v v rrm s70k thru s70qr 2. reverse polarity (r): stud is anode. dc blocking voltage v dc v continuous forward current i f a operating temperature t j c storage temperature t stg c parameter symbol unit diode forward voltage a ma thermal characteristics thermal resistance, junction - case r thjc c/w 0.65 70 70 70 1250 1250 1250 1200 1.1 1.1 -55 to 150 9 1000 800 10 s70q (r) 1.1 10 10 -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 s70k (r) S70M (r) 0.65 0.65 v r = 100 v, t j = 180 c 99 a v t c = 25 c, t p = 8.3 ms t c 140 c conditions v r = 100 v, t j = 25 c i f = 70 a, t j = 25 c reverse current i r v f electrical characteristics, at tj = 25 c, unless otherwise specified surge non-repetitive forward current, half sine wave i f,sm www.genesicsemi.com/s ilicon-products/standard-recovery-rectifiers/ 1
s70k thru s70qr www.genesicsemi.com/s ilicon-products/standard-recovery-rectifiers/ 2
package dimensions and terminal configuration product is marked with part number and terminal configuration. s70k thru s70qr do- 5 (do-203ab) j k g f a e d p n b c m inches millimeters min max min max a 1/4 ?28 unf b 0.669 0.687 17.19 17.44 c ----- 0.794 ----- 20.16 d ----- 1.020 ----- 25.91 e 0.422 0.453 10.72 11.50 f 0.115 0.200 2.93 5.08 g ----- 0.460 ----- 11.68 j ----- 0.280 ----- 7.00 k 0.236 ----- 6.00 ----- m ----- 0.589 ----- 14.96 n ----- 0.063 ----- 1.60 p 0.140 0.175 3.56 4.45 www.genesicsemi.com/s ilicon-products/standard-recovery-rectifiers/ 3
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